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Stress State Determination in Nanoelectronic Silicon Devices Coupling COMSOL Multiphysics and a Recursive Dynamical CBED Pattern Simulation

A. Spessot[1,2], S. Frabboni[1], A. Armigliato[3], and R. Balboni[3]
[1]Numonyx Advanced R&D NVMTD-FTM, Agrate Brianza, Italy
[2]National Research Center S3, CNR-INFM and Department of Physics, University of Modena e Reggio Emilia, Modena, Italy
[3]CNR-IMM Section of Bologna, Italy
Veröffentlicht in 2008

Strained technology is being promoted as the best way to extend the performance of semiconductor transistors. An inhomogeneous layer deposited on top of a silicon device can induce a strong modification in the real silicon strain state, and consequently in its electronic performance. Coupling the finite elements analysis done by COMSOL with a recursive CBED and LACBED dynamical simulation, we are able to explain the observed diffraction pattern modification, reconstructing the strain field in the device.

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