Modeling of III-Nitride Quantum Wells with Arbitrary Crystallographic Orientation for Nitride-Based Photonics
A program for self-consistent modeling of electron-hole energy spectrum and space-charge distribution in III-nitride based quantum well (QW) structures has been developed. The model takes into consideration full 6-band description of the valence band states, nonparabolicity of the electron spectrum, quantum confinement of electrons and holes, strain induced modifications of the band structure, spontaneous- and piezo-polarization fields, background layer doping, and variable level of charge carrier injection.
Calculated optical characteristics include electron-hole optical susceptibility, spontaneous and stimulated emission rates, polarization coefficients for light emission and absorption, radiative recombination rates, and optical gain spectra in optically active nitride QWs.
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