Veröffentlichungen und Präsentationen

Silicon carbide (SiC) single crystals are industrially produced by the physical vapor transport technique. Apart from the geometry of the growth setup, there are two main process parameters that can be controlled: temperature and pressure. To support the development of the process, numerical simulation has imposed as the only tool able to describe the process itself, providing a good evaluation of physical parameters and their distribution inside the growth chamber. In this work, we present a method to assess the chemistry of solid SiC crystal, i.e. the activities of both Si and C atoms in the crystal during the PVT growth process by using the coupled numerical modeling of heat and mass transfer and the thermodynamic calculations approach.