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Photo carrier generation in the Semiconductor Module

Posted 21.03.2014, 17:02 GMT-4 Version 4.4 3 Replies

Eric Moore
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I'm trying to figure out how to achieve photo-carrier generation in a direct band gap semiconductor in the COMSOL 4.4 semiconductor module. The only form of generation I see in the module is Impact Ionization which consists of various a,b,c, and d factors for electrons and holes. I need the equivalent of a photo-excitation signal to analyze the IV characteristics of a semiconductor. How can I model the generation of photo-carriers in the semiconductor module?
3 Replies Last Post 04.12.2014, 08:37 GMT-5
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Hello Eric Moore

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Ryan Tortorich
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Posted: 1 decade ago 24.07.2014, 16:00 GMT-4
I'm trying to do the same thing. Any luck on coupling the physics?
I'm trying to do the same thing. Any luck on coupling the physics?
Michal Cifra
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Posted: 10 years ago 03.12.2014, 20:11 GMT-5
Generation term is simply included by using User Defined Recombination and setting recombination rate to be negative
Generation term is simply included by using User Defined Recombination and setting recombination rate to be negative
Daniel Smith COMSOL Employee

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Posted: 10 years ago 04.12.2014, 08:37 GMT-5
Hi, there is some new functionality in V5.0 to assist in this type of modeling. You can also refer to this blog entry:

www.comsol.com/blogs/investigating-led-efficiency-via-multiphysics-simulation/

and these new models:

www.comsol.com/model/ingan-algan-double-heterostructure-led-20299
www.comsol.com/model/gaas-pin-photodiode-19705
Hi, there is some new functionality in V5.0 to assist in this type of modeling. You can also refer to this blog entry: http://www.comsol.com/blogs/investigating-led-efficiency-via-multiphysics-simulation/ and these new models: http://www.comsol.com/model/ingan-algan-double-heterostructure-led-20299 http://www.comsol.com/model/gaas-pin-photodiode-19705

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