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Ohmic contact in Semiconductor module

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Hi, I am unsure why the ideal ohmic setting for metallic contacts does not consider the difference in chemical potential between the metal and semiconductor. The textbook explains that there is a band bending effect at the metal/semiconductor interface, but the results from the Semiconductor Equilibrium study do not show it.

I would appreciate any suggestions or hints.


1 Reply Last Post 02.03.2023, 13:25 GMT-5

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Posted: 2 years ago 02.03.2023, 13:25 GMT-5
Updated: 2 years ago 06.03.2023, 11:33 GMT-5

The COMSOL document describes the Ideal Ohmic Contact is used for the case of a highly doped semiconductor with negligible barrier thickness.

Could someone share their experience in modeling the band bending effect in a slightly-doped semiconductor? I am having difficulty understanding how to do it.

The COMSOL document describes the Ideal Ohmic Contact is used for the case of a highly doped semiconductor with negligible barrier thickness. Could someone share their experience in modeling the band bending effect in a slightly-doped semiconductor? I am having difficulty understanding how to do it.

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