Discussion Forum

Hello all!

Here is what I want to simulate, first in 2D. A 500 keV electron (let's say coming from the right) hits an amorphous silicon surface, creating many electron-hole pair inside the amorphous silicon. Some of these electrons are ejected back outside the amorphous silicon. The whole system is put inside a constant homogeneous top-down electric field to separate the electron-hole pair.

I just want to start right. My question is: which physics & coupling should I use for better results? Here is what I wanted to try next week:
-> For the single primary electron: charged particle tracing (cpt) (and the trajectory will be a little bent because of the coupling with the electric field),
-> For the constant electric field: electrostatics (es),
-> For the electron-hole pair behavior inside the amorphous silicon: plasma (plas) (although it's not plasma, coupled with the electric field, like in the dielectric barrier discharge tuto example),
-> But what should I use to provoke an e-/h+ pair creation when my incoming electron hits the amorphous silicon?
-> For the secondary electrons exciting the silicon: nothing, as they are the product of the previous coupling.
Would all that be a good start?

Another quick question: amorphous silicon is not included in my material list. I can define it, but is there a quicker way to import this material?

Thank you very much.