Discussion Forum

Hello, I want to thermally analyze a semiconductor IGBT power module in COMSOL. Its picture is attached. The procedure of my study is below: Electrical potentials are applied to gate, emitter and collector contacts of the module (upper and lower surfaces of the silicon chip). Also, electrical current is injected to wire bonds. Then, electric field (E) and current density (J) are determined in all points of the silicon chip of the module to obtain the power loss density (P=E*J) distribution inside the chip. We know electric field, current density and as a result the power loss density are not similar in any point of the silicon chip. Also, the heat generated due to the current flowing in Aluminum wires (Ohmic dissipation) should be considered in the study. Then, both power loss density and Ohmic dissipation will be used to study temperature distribution in the module components. - To do these, what physics should be used in COMSOL? - Can I provide the electric field, current density and power loss density distributes inside the silicon chip? - can I apply only the silicon material to chip and then follow my study? Or should be determined p and n domains inside the silicon chip?