COMSOL Multiphysics® Based Identification of Thermal Properties of Mesoporous Silicon by Pulsed Photothermal Method
The silicon is mainly known under its single-crystal shape and polycrystalline. Since a few decades, a new type of morphology is developed: the porous silicon (p-Si). Meso-porous silicon (Mp-Si) is one of promising materials for future microelectronic chips multi-functionalization systems, and for micro-sensing devices.
For thermal properties investigation many experimental systems were developed based on the photothermal effect. One of typical way is to induce a rapid surface temperature increase using pulsed laser beam acting like a heat source (volume or surface depending on the absorption coefficient) to finally create a model of this interaction. At least, it will be possible to determine the thermal parameters using the identification method (optimization by the least squares for example).
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