Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.
Picosecond pulsed laser heating problems
Posted 26.03.2015, 06:02 GMT-4 Heat Transfer & Phase Change Version 5.0 6 Replies
Please login with a confirmed email address before reporting spam
Hello,
I am trying to model the laser heating of silicon using a picosecond pulsed laser but have been encountering some problems that I can't seem to solve.
Firstly the model:
I have a 3D rectangular geometry for the silicon, and a 40 um diameter circular beam incident upon the top surface. The laser is modeled as a heat source using
Qin = Q0 * (1-Rc) * Ac * (1/ pi * sigx * sigy) * an1(x,y) * exp(-Ac * abs(z)) * an2(t)
Q0 is the input laser power, Rc the reflection coefficient, Ac the temperature dependent absorption coefficient, sigx & y are the radius of the laser beam in x and y. The exp(-Ac * abs(z)) factor accounts for the exponential decay of the beam intensity within the material as per the Beer-Lambert law.
an1 is a function which describes the Gaussian distribution of the laser beam in x and y
an2 is a function which describes the time varying power input to make it pulsed. Currently an2 is set as a triangular pulse shape of variable pulse duration, and a periodic repetition such that one pulse is incident every 500 ns (2 MHz repetition rate)
I am using the standard heat transfer in solids option to model the heat flow, with all properties taken from the material database on silicon. I am using a time step of 100 ns and running the simulation over 10 us.
The simulation produces believable temperature distributions for pulse durations of 7 ns and above; however when I decrease the pulse duration any further the model shows no heating at all!
I have tried changing the periodic function in an2 as I thought that perhaps, with a shorter pulse duration, the gradient of the change in laser power with respect to time was too high for the software to handle, but that has had no effect on the results. I have also tried decreasing the time step from 100 ns to 50 ns but that has also had no effect on the lack of heating below 7 ns.
Has anyone got any ideas, or successfully modeled picosecond laser pulse heating of silicon and got any ideas as to what might be causing my problems and how to fix them?
Thanks,
Matt
I am trying to model the laser heating of silicon using a picosecond pulsed laser but have been encountering some problems that I can't seem to solve.
Firstly the model:
I have a 3D rectangular geometry for the silicon, and a 40 um diameter circular beam incident upon the top surface. The laser is modeled as a heat source using
Qin = Q0 * (1-Rc) * Ac * (1/ pi * sigx * sigy) * an1(x,y) * exp(-Ac * abs(z)) * an2(t)
Q0 is the input laser power, Rc the reflection coefficient, Ac the temperature dependent absorption coefficient, sigx & y are the radius of the laser beam in x and y. The exp(-Ac * abs(z)) factor accounts for the exponential decay of the beam intensity within the material as per the Beer-Lambert law.
an1 is a function which describes the Gaussian distribution of the laser beam in x and y
an2 is a function which describes the time varying power input to make it pulsed. Currently an2 is set as a triangular pulse shape of variable pulse duration, and a periodic repetition such that one pulse is incident every 500 ns (2 MHz repetition rate)
I am using the standard heat transfer in solids option to model the heat flow, with all properties taken from the material database on silicon. I am using a time step of 100 ns and running the simulation over 10 us.
The simulation produces believable temperature distributions for pulse durations of 7 ns and above; however when I decrease the pulse duration any further the model shows no heating at all!
I have tried changing the periodic function in an2 as I thought that perhaps, with a shorter pulse duration, the gradient of the change in laser power with respect to time was too high for the software to handle, but that has had no effect on the results. I have also tried decreasing the time step from 100 ns to 50 ns but that has also had no effect on the lack of heating below 7 ns.
Has anyone got any ideas, or successfully modeled picosecond laser pulse heating of silicon and got any ideas as to what might be causing my problems and how to fix them?
Thanks,
Matt
6 Replies Last Post 17.06.2016, 17:36 GMT-4