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Reflection Calculation in Scatterer on Substrate Example
Posted 09.08.2014, 21:40 GMT-4 RF & Microwave Engineering Version 4.4 0 Replies
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I am doing a simulation similar to the scatterer on substrate example. My substrate I Si and my scatterer is Ga in frequency range of between 480 THz and 880 THz.
I would like to calculate reflection.
When I calculate reflection with port (abs(emw.S11)^2), it gives me a constant number (~0.3) which makes sense since the first study is without substrate.
Therefore, what I do: I integrate emw2.Poavz over a surface in front of the structure to get total power (P_m), including reflected and incident. Since the reflected power in in +z direction (P_ref) and incident power is in -z direction (-P), therefore according to -P+P_ref=P_m, reflected power should be obtain as P_ref = P+P_m.
But I am getting a reflection which is not sensible for me, negative values or bigger than one.
My first question:
Is the method that I am using to calculate reflected power right?
Second:
The surface which I am integrating on it does not include PML domain, actually I just activated physical domain for solution from Data Sets. Should I include whole space including PML domain in my calculation?
I appreciate if someone helps me to solve this problem.
Thanks,
Mohammad
Hello Mohammad Parvinnezhad Hokmabadi
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